advanced power n and p-channel enhancement electronics corp. mode power mosfet simple drive requirement n-ch bv dss 60v low on-resistance r ds(on) 36m fast switching performance i d 6a rohs compliant & halogen-free p-ch bv dss -60v r ds(on) 72m description i d -4.2a absolute maximum ratings@t j =25 o c(unless otherwise specified) symbol parameter rating units n-channel p-channel v ds drain-source voltage 60 -60 v v gs gate-source voltage + 20 + 20 v i d @t a =25 6 -4.2 a i d @t a =70 4.7 -3.3 a i dm pulsed drain current 1 30 -30 a p d @t a =25 total power dissipation 2.0 w linear derating factor 0.016 w/ t stg storage temperature range -55 to 150 t j operating junction temperature range -55 to 150 symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 62.5 /w data and specifications subject to change without n otice 201501094 parameter 1 thermal data ap4575gm-hf halogen-free product drain current, v gs @ 10v 3 drain current, v gs @ 10v 3 g2 d2 s2 g1 d1 s1 s1 g1 s2 g2 d1 d1 d2 d2 so-8 ap4575 series are from advanced power innovated design and silicon process technology to achieve the lowest possib le on-resistance and fast switching performance. it provides the designer with an extreme efficient device for use in a wide range of power applications. the so-8 package is widely preferred for all commercial- industrial surface mount applications using infrared reflow technique and suited for voltage conversion or switch applications.
n-ch electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 60 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =5a - - 36 m v gs =4.5v, i d =3a - - 42 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 1 - 3 v g fs forward transconductance v ds =10v, i d =5a - 8 - s i dss drain-source leakage current v ds =60v, v gs =0v - - 1 ua drain-source leakage current (t j =70 o c) v ds =48v, v gs =0v - - 25 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge i d =6a - 17 29 nc q gs gate-source charge v ds =48v - 4.5 - nc q gd gate-drain ("miller") charge v gs =4.5v - 10 - nc t d(on) turn-on delay time v ds =30v - 9 - ns t r rise time i d =1a - 6 - ns t d(off) turn-off delay time r g =3.3 - 28 - ns t f fall time v gs =10v - 10 - ns c iss input capacitance v gs =0v - 1320 2670 pf c oss output capacitance v ds =25v - 140 - pf c rss reverse transfer capacitance f=1.0mhz - 110 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =1.7a, v gs =0v - - 1.2 v t rr reverse recovery time i s =6a, v gs =0v - 29 - ns q rr reverse recovery charge di/dt=100a/s - 35 - nc ap4575gm-hf 2
ap4575gm-hf p-ch electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -60 - - v r ds(on) static drain-source on-resistance 2 v gs =-10v, i d =-4a - - 72 m v gs =-4.5v, i d =-3a - - 88 m v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -1 - -3 v g fs forward transconductance v ds =-10v, i d =-3a - 11 - s i dss drain-source leakage current v ds =-60v, v gs =0v - - -1 ua drain-source leakage current (t j =70 o c) v ds =-48v, v gs =0v - - -25 ua i gss gate-source leakage v gs =+ 20v, v ds =0v - - + 100 na q g total gate charge i d =-3a - 14 34 nc q gs gate-source charge v ds =-48v - 2.5 - nc q gd gate-drain ("miller") charge v gs =-4.5v - 8 - nc t d(on) turn-on delay time v ds =-30v - 9 - ns t r rise time i d =-1a - 9.5 - ns t d(off) turn-off delay time r g =3.3 - 42 - ns t f fall time v gs =-10v - 28 - ns c iss input capacitance v gs =0v - 1000 2850 pf c oss output capacitance v ds =-25v - 125 - pf c rss reverse transfer capacitance f=1.0mhz - 95 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =-1.7a, v gs =0v - - -1.2 v t rr reverse recovery time i s =-3a, v gs =0v - 30 - ns q rr reverse recovery charge di/dt=-100a/s - 45 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test this product is sensitive to electrostatic discharg e, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized . herein; neither does it convey any license under it s patent rights, nor the rights of others. apec reserves the right to make changes without fur ther notice to any products herein to improve reliability, function or design. 3 3.surface mounted on 1 in 2 copper pad of fr4 board, t < 10sec ; 135 /w when mounted on min. copper pad. apec does not assume any liability arising out of t he application or use of any product or circuit des cribed
ap4575gm-hf n-channel fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate volta ge fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate thresho ld voltage v.s. reverse diode junction temperature 4 0 20 40 60 80 0 1 2 3 4 5 6 7 v ds , drain-to-source voltage (v) i d , drain current (a) t a = 25 o c 10v 7.0v 6.0v 5.0v v g = 4.0v 0 20 40 60 80 0 2 4 6 8 10 v ds , drain-to-source voltage (v) i d , drain current (a) t a = 1 5 0 o c 10v 7.0v 6.0v 5.0v v g = 4.0v 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =5a v g =10v 10 20 30 40 50 2 4 6 8 10 v gs , gate-to-source voltage (v) r ds(on) (m ? ) i d = 3 a t a =25 o c 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1 1.2 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c 0.3 0.5 0.7 0.9 1.1 1.3 1.5 -50 0 50 100 150 t j ,junction temperature ( o c) normalized v gs(th)
ap4575gm-hf n-channel fig 7. gate charge characteristics fig 8. typical capacitance characteristi cs fig 9. maximum safe operating area fig 10. effective transient thermal impedanc e fig 11. switching time waveform fig 12. gate charge waveform 5 t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 4.5v q gs q gd q g charge 0 2 4 6 8 10 0 5 10 15 20 25 30 35 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =6a v ds =48v 0 400 800 1200 1600 2000 1 5 9 13 17 21 25 29 v ds , drain-to-source voltage (v) c (pf) f=1.0mhz c iss c oss c rss 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thja + t a r thja =135 o c/w t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0.01 0.1 1 10 100 0.1 1 10 100 v ds , drain-to-source voltage (v) i d (a) t a =25 o c single pulse 100us 1ms 10ms 100ms 1s dc operation in this area limited by r ds(o n)
ap4575gm-hf p-channel fig 1. typical output characteristics f ig 2. typical output characteristics fig 3. on-resistance v.s. gate voltag e fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate thresho ld voltage v.s. reverse diode junction temperature 6 0 10 20 30 40 0 2 4 6 8 -v ds , drain-to-source voltage (v) -i d , drain current (a) t a = 25 o c -10v -7.0v -6.0v -5.0v v g =- 4.0v 0 10 20 30 0 2 4 6 8 -v ds , drain-to-source voltage (v) -i d , drain current (a) t a = 1 5 0 o c -10v -7.0v -6.0v -5.0v v g =- 4.0v 60 65 70 75 80 85 90 2 4 6 8 10 -v gs ,gate-to-source voltage (v) r ds(on) (m ? ) i d = - 3 a t a =25 o c 0.4 0.8 1.2 1.6 2.0 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d = - 4 a v g =-10v 0.3 0.6 0.8 1.1 1.3 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized v gs(th) 0 2 4 6 8 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -v sd , source-to-drain voltage (v) -i s (a) t j =25 o c t j =150 o c
ap4575gm-hf p-channel fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. ef fective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 7 t d(on) t r t d(off) t f v ds v gs 10% 90% q v g -4.5v q gs q gd q g charge 0 2 4 6 8 10 0.0 10.0 20.0 30.0 q g , total gate charge (nc) -v gs , gate to source voltage (v) i d =-4a v ds =-48v 0 400 800 1200 1600 2000 1 5 9 13 17 21 25 29 -v ds , drain-to-source voltage (v) c (pf) f=1.0mhz c iss c oss c rss 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thja + t a r thja =135 o c/w t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0.01 0.1 1 10 100 0.1 1 10 100 -v ds , drain-to-source voltage (v) -i d (a) t a =25 o c single pulse 100us 1ms 10ms 100ms 1s dc operation in this area limited by r ds(on)
ap4575gm-hf marking information 8 4575gm ywwsss part number date code (ywwsss) y last digit of the year ww week sss sequence package code meet rohs requirement for low voltage mosfet only
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